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本文叙述了同平面真空三极管的结构设计考虑,设计了六种不同结构的同平面三极管。在自动伏安特性测试仪上测得了稳定的伏安特性曲线和栅压-阳流特性。研究了它们的跨导;内阻和放大系数与极间结构和运用参量的关系。研究表明:采用弓形电极布置;延长电极长度;双管并联和宽内栅结构可获得μ值接近10。在动态运用时也可获得K值为10。在此基础上把同平面三极管和二极管组成检测单元——倒相器来估价,以为进一步研制真空集成电路打下基础。
This article describes the structural design considerations of the same plane vacuum transistor, and designs six kinds of same planar transistors with different structures. The stability of the volt-ampere characteristic curve and the grid-to-anode current characteristics were measured on an automatic voltammetry tester. The transconductance of them is studied. The relationship between internal resistance and amplification factor and the inter-pole structure and the operating parameters are studied. The results show that: the use of arcuate electrode arrangement; to extend the length of the electrode; double tube parallel and wide inner gate structure can be obtained μ value close to 10. In the dynamic use can also be obtained K value of 10. On the basis of this, the same planar transistor and diode are taken as the detection unit - inverter to evaluate, in order to lay a foundation for further development of vacuum IC.