Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

来源 :稀有金属：英文版 | 被引量 : 0次 | 上传用户：g348386408

【摘要】

：

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80€?0 cm in the resistivity

【作者】

：

Yuejiao He Huaixiang Li Chengh

【机构】

：

InstituteofSemiconductors

【出处】

：

稀有金属：英文版

【发表日期】

：

2001年1期

【关键词】

：

POROUS silicon PHOTOLUMINESCENCE surface MODIFICATION rapid thermal OXIDATION po

【基金项目】

：

国家自然科学基金，山东省自然科学基金

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The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single-crystal (111) silicon wafers (80€?0 cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 2

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Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

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