报道了一种基于双层多晶硅材料的MEMS热电偶真空度传感器。该器件采用双层热偶排布方式可进一步减小器件横向尺寸,同时采用XeF_2各向同性正面刻蚀技术释放形成微腔结构,该技术避免了湿法腐蚀工艺复杂、不易控制等缺陷。在器件制备的基础上,对该器件在不同真空度条件下的响应特性进行了测试,测试结果表明该器件在常温下的真空响应上限达10~5 Pa。而不同加热功率条件下,该器件的响应灵敏度随着加热功率的增大呈增大趋势。 A MEMS thermocouple vacuum sensor based on double-layer polysilicon is reported. The device adopts double-layer thermocouple arrangement to further reduce the lateral size of the device, meanwhile, the microcavity structure is released by XeF2 isotropic frontal etching technology, which avoids the defects of complex and difficult to control wet etching process. Based on the preparation of the device, the response characteristics of the device under different vacuum conditions were tested. The test results show that the upper limit of the vacuum response of the device under normal temperature is 10 ~ 5 Pa. Under different heating power conditions, the response sensitivity of the device increases with the increase of heating power.