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真空蒸发制备Sb掺杂Sn2S3多晶薄膜。研究不同比例Sb掺杂对Sn2S3薄膜的电学、结构、表面形貌、化学组分的影响,实验给出掺Sb5%薄膜经380℃热处理30 min可获得结构良好正交晶系的Sn2S3∶Sb多晶薄膜,薄膜的电阻率从未掺杂时的79kΩ.cm降到23.7Ω.cm,下降了三个数量级。Sn2S3薄膜表面为颗粒状,体内化学计量比Sn/S为1∶1.49,与标准计量比非常接近;掺Sb(5%)后为1∶0.543,Sn过量。Sn和S以Sn2+,Sn4+,S2-形式存在于薄膜中;Sb元素显示正5价,部分Sb5+进入晶格替位Sn4+。
Preparation of Sb Doped Sn2S3 Polycrystalline Thin Films by Vacuum Evaporation. The effects of Sb doping with different proportions on the electrical, structural, surface morphology and chemical composition of Sn2S3 thin films were studied. The results show that Sn2S3:Sb with good orthorhombic structure can be obtained by doping Sb5% The resistivity of the thin film and thin film has dropped by three orders of magnitude from 79kΩ.cm without doping to 23.7Ω.cm. Sn2S3 film surface is granular, the body stoichiometric Sn / S 1: 1.49, very close to the standard ratio; doped Sb (5%) after 1: 0.543, Sn excess. Sn and S are in the form of Sn2 +, Sn4 + and S2-. The Sb element shows the positive 5-valent and the part of Sb5 + enters the lattice alternate Sn4 +.