在能量分别为50～700keV和50～1200keV范围内,把硼离子和磷离子注入SiO_2薄膜中。利用二次离子质谱分析(SIMS)测出浓渡分布,并且采用Leverberg-Marquardt优选法,进行皮尔逊分布近似。导出的范围和离散值与已发表的数据符合得非常好。优选法对于第三矩量和第四矩量给出了很精确的值,确定了注入离子的能量和不同的分布矩量之间的一般关系,同时把这些结果同SUPREM-3工艺模拟程序中所使用的值进行比较。 In the energy range of 50 ~ 700keV and 50 ~ 1200keV, boron ions and phosphorus ions are implanted into the SiO_2 film. The concentration distribution was measured by SIMS and the Pearson distribution approximation was performed using the Leverberg-Marquardt optimization. The derived range and discrete values ​​are in good agreement with the published data. The preferred method gives very accurate values ​​for the third moment and the fourth moment, determines the general relationship between the energies of the implanted ions and the different moment of distribution, and compares these results with those of the SUPREM-3 process simulator The values ​​used are compared.