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研究普通热处理和快速热处理工艺下直拉单晶硅中过渡族金属铜杂质对洁净区生成的影响.通过腐蚀和光学显微镜研究发现,常规高一低.高三步洁净区生成热处理样品中,第一步高温热处理前对样品铜沾污,样品中没有洁净区生成,高密度的铜沉淀布满了样品整个截面.而第二步、第三步热处理过程中引入铜杂质不影响洁净区的生成.研究表明,高温热处理过程中生成的铜沉淀不能溶解是导致洁净区不能形成的最主要原因.另外,由于不同温度下热处理,导致引入铜杂质的平衡浓度不同,会在一定程度上影响洁净区的厚度.对于快速热处理样品,可以得到相似的结果.
The effects of transition metals copper impurities on the clean area were studied under normal heat treatment and rapid heat treatment.The results of corrosion and optical microscopy showed that in the three-step clean area, heat treatment was the first The samples were contaminated with copper before the high-temperature heat treatment, and no clean area was formed in the sample, and the high-density copper deposits covered the entire cross-section of the sample, while the second and third steps of introducing copper impurities during the heat treatment did not affect the formation of the clean area. The results show that the copper precipitate generated during high temperature heat treatment can not be dissolved, which is the main reason that the clean area can not be formed.In addition, due to the different temperature, the equilibrium concentration of copper impurities introduced into the clean area will be affected to a certain extent Thickness. Similar results were obtained for the rapid heat-treated samples.