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引言本征半导体Hg_(1-x)Cd_xTe变成更为重要的红外光伏探测器材料是因为最近在液相外延(LPE)法生长晶体方面取得了进展。用液相外延法得到的组分均匀性比块体材料好,并且不需要长时间退火来达到均匀性。此外,用LPE法可制备具有不同组分和掺杂浓度的多层HgCdTe结构。用LPE法在CdTe衬底上生长HgCdTe对制备背照式探测器是理想的。在制备每个具有成百或上千个元的HgCdTe焦平面探测器阵列时,就必须要能够生长大面积均匀组分器件质量的HgCdTe。许多单位报导了在垂直和水平炉结构中用LPE法生长了HgCdTe。大多数工作集中于自富碲熔体中进行水平生长,但最近已进展
Introduction The evolution of the intrinsic semiconductor Hg_ (1-x) Cd_xTe into the more important infrared photodetector material is due to the recent advances in crystal growth by the liquid phase epitaxy (LPE). The compositional homogeneity obtained by liquid-phase epitaxy is better than the bulk material and does not require long time annealing to achieve homogeneity. In addition, multilayer HgCdTe structures with different compositions and doping concentrations can be prepared by the LPE method. The growth of HgCdTe on CdTe substrates by the LPE method is ideal for back-illuminated detectors. When fabricating HgCdTe focal plane detector arrays with hundreds or thousands of elements each, HgCdTe, which is capable of growing devices of large area and uniform composition, must be produced. Many units report the growth of HgCdTe by the LPE method in vertical and horizontal furnace structures. Most work has focused on horizontal growth from Te-rich melts, but has recently progressed