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用溶胶?凝胶法在不同的基片上制备了具有高度 C 轴即(002)取向的 ZN O 薄膜,研究了溶剂、稳定剂等对合成的先体溶液的影响.对薄膜的 X R D 分析表明随热处理温度的增加,C 轴取向度增大,并且薄膜的晶粒尺寸在 300 ° C~500 ° C 范围内增幅较大.用端面耦合的方法测量了制备在 SI O2/ SI(111)基片上薄膜的波导损耗,即随热处理温度的增加,波导损耗增大,主要来源于 ZN O 薄膜与 SI O2 的界面及晶粒的散射.制备在 PT/ SI O2/ SI(111)基片上薄膜的相对介电常数为 7~13,电阻率则为 1.7*104 Ω?CM ~9.8*105 Ω?CM .“,”Sol Gel derived c axis oriented ZnO thin films were prepared on various substrates. The stability of solution was examined through solvent and stabilizer. XRD indicated that the film c axis orientation and grain size of films were increased with heat treatment temperature. The scope of increase of grain size is larger in the range of 300 °C~500 °C. The optical waveguide losses of ZnO films deposited on SiO 2/Si(111) substrates were measured using end coupling method. The losses were increased with the increasing of heat treatment temperature. The losses result in the scattering of the boundary layer between of ZnO film and SiO 2 and the ZnO grain. Dielectric constant and resistivity of thin films deposited on Pt/SiO 2/Si(111) substrates are respectively in the range of 7~13 and 1.7*10 4 Ω·cm~9.8*10 5 Ω·cm.