硫钝化是一种比较有效的钝化ＧａＡｓ 表面的方法．本文使用Ｎａ２Ｓ、Ｓ２Ｃｌ２ 和ＣＨ３ＣＳＮＨ２三种化学试剂对表面本征层重掺杂层（ｓｉｎ＋ ）结构的ＧａＡｓ 样品进行了钝化，利用光调制反射谱观察到许多个ＦｒａｎｚＫｅｌｄｙｓｈ 振荡，测量出本征层的电场强度，研究了ＧａＡｓ表面硫钝化前后费米能级的变化，并且比较了各种钝化方法的钝化效果． Sulfur passivation is a more effective method of passivating GaAs surfaces. In this paper, GaAs samples with surface-intrinsic layer-heavily doped layer (sin +) were passivated by using three kinds of chemical reagents: Na2S, S2Cl2 and CH3CSNH2. A number of FranzKeldysh The electric field intensity of the intrinsic layer was measured. The Fermi level before and after sulfur passivation was investigated. The passivation effect of various passivation methods was also compared.