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给出了适用于分析复杂结构ＨＢＴ的电荷传输延迟时间及截止频率的电荷分配模型（ＣＰ）。模拟了Ｓｉ／ＳｉＧｅＨＢＴ的高频特性。模拟结果显示Ｓｉ／ＳｉＧｅＨＢＴ的频率特性较ＳｉＢＪＴ大为改善，而基区及集电结ＳＣＲ区的电荷输运时间将成为提高Ｓｉ／ＳｉＧｅＨＢＴ截止频率的主要制约因素。与实验报道的对比证实了本模型可作为优化器件设计的有效手段。
The charge distribution model (CP), which is suitable for analyzing the charge transfer delay time and cut-off frequency of complex structure HBT, is given. The high frequency characteristics of Si / SiGeHBT are simulated. The simulation results show that the frequency characteristics of Si / SiGe HBT are greatly improved compared with that of SiBJT, while the charge transport time of base region and collector SCR region will become the main limiting factor for increasing the cutoff frequency of Si / SiGe HBT. The comparison with the experimental report confirms that this model can be used as an effective means to optimize the device design.