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用射频溅射方法制备了无定形锗硅合金 a-Si_(1-x)Ge_x: H膜的光学带隙随x值的增加而单调下降.用最小二乘法将光学带隙数据作线性拟合得到E_g(eV)=1.79-0.98x.当膜中锗的原子百分比从0增加到66％时,合金膜室温暗电导率从10~(-10)Q~(-1)cm~(-1)单调上升到10~(-4)Q~(-1)·cm~(-1);电导激活能却从0.84eV单调下降到0.40eV. 用XPS 谱测量合金组分证明锗的溅射速率是硅的1.5倍.测量了光子能量为1.2eV时的吸收系数,结果表明,a-Si(1-x)Ge_x:H比a-Si:H有较多的悬挂键.这些悬挂键在较高氢分压下可部分被饱和.
The optical band gap of a-Si_ (1-x) Ge_x: H films deposited by RF sputtering was monotonously decreased with the increase of x value.The optical bandgap data were linearly fitted (EV) = 1.79-0.98x. When the atomic percentage of germanium in the film increases from 0 to 66%, the room temperature dark conductivity of the film increases from 10 ~ (-10) Q ~ (-1) cm ~ (-1) ) Monotonically increased to 10 ~ (-4) Q ~ (-1) · cm ~ (-1), but the conductance activation energy monotonically decreased from 0.84eV to 0.40eV. The XPS spectra of alloying components proved that the sputtering rate of germanium Is 1.5 times that of silicon.The absorption coefficient at photon energy of 1.2eV was measured and the results showed that a-Si (1-x) Ge_x: H has more dangling bonds than a-Si: High partial pressure of hydrogen can be partially saturated.