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低频噪声的测量和分析已成为红外探测器性能和可靠性评估的一种重要手段。制备了聚酰亚胺单层钝化和硫化后ZnS/聚酰亚胺双层钝化两种结构InGaAs探测器,测试了不同偏压或不同温度下器件的低频噪声谱,讨论了偏压和温度对InGaAs探测器低频噪声的影响。随着偏压的增加,噪声增大,拐点向低频方向移动,并且低频噪声随温度降低而减小。认为硫化后ZnS/聚酰亚胺双层钝化器件相对聚酰亚胺单层钝化器件相同偏压或温度下噪声较小,拐点低。因为硫化处理和ZnS层增强了钝化效果,器件的表面漏电流明显减小,因而大大降低了器件的低频噪声。
Measurement and analysis of low frequency noise has become an important means of evaluating the performance and reliability of infrared detectors. Two types of InGaAs detectors, one passivated by polyimide and two passivated by ZnS / polyimide, were fabricated. The low frequency noise spectrum of the device under different bias voltages and temperatures was tested. The bias voltage and Effect of Temperature on Low Frequency Noise of InGaAs Detector. As the bias voltage increases, the noise increases, the inflection point moves to the lower frequency, and the low frequency noise decreases with decreasing temperature. The vulcanized ZnS / polyimide double passivation device is considered to have the same noise or temperature as the polyimide monolayer passivation device with less noise and low inflection point. Since the sulfidation and ZnS layers enhance the passivation effect, the surface leakage current of the device is significantly reduced, thus greatly reducing the low frequency noise of the device.