【摘 要】
：
Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance meas
【机 构】
：
Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and E
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Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni20Fe80 and W/Co20Fe60B20) and the topological insulator/ferromagnet (Bi2Se3lNi20Fe80).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.
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