Preparation and Characterization of Hg0.8Cd0.2Te Epila

来源 :稀有金属：英文版 | 被引量 : 0次 | 上传用户：cloud0906

【摘要】

：

Hg1-xCdxTe（CMT）epilayers with corresponding wavelength of 10.6μm（x=0.2）were reproduciblygrown on GaAs substrates in a movable hot wall MOCVD

【作者】

：

丁永庆彭瑞伍韦光宇陈纪安李贤春张玉平刘克岳赵振

【机构】

：

ShanghaiInstituteofMetallurgyChineseAcademyofSciences,Shanghai200050,China,ShanghaiInstituteofMetall

【出处】

：

稀有金属：英文版

【发表日期】

：

1993年3期

【关键词】

：

Hot wall MOCVD HgCdTe/CdTe/GaAs structures CdTe/GaAs Buffer layers OPTOELECTRONI

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Hg1-xCdxTe（CMT）epilayers with corresponding wavelength of 10.6μm（x=0.2）were reproduciblygrown on GaAs substrates in a movable hot wall MOCVD reactor.Rather high uniformity of solid compo-sitions was obtained.X

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