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Silicon(Si)has widely been used as an essential material in the modern semiconductor industry.Recently,new attempts have......
By utilizing Schottky contact in device fabrication,we have constructed fast response ultraviolet photodetectors based o......
Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chem
The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots(QDs) as dislocation filters......
Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferre......
Hg<sub>1-x</sub>Cd<sub>x</sub>Te（CMT）epilayers with corresponding wavelength of 10.6μm（x=0.2）were reproduciblygrown on GaAs......
利用化学气相沉积方法制备了石墨烯薄膜,并研究了其光电特性。以乙醇做反应原料、氩气作为携载气体,在873 K、973 K、1 073 K的温......
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