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用脉冲激光镀膜法 ,在不同的温度和氧压条件下 ,在Si(10 0 )片上制备了一系列的CeO2 膜。X射线衍射分析表明 ,在较低的氧压下生长的CeO2 膜为 (111)取向 ,在较高的氧压下生长的膜则为 (10 0 )取向。研究表明 ,CeO2 膜的取向对氧压显示了独特的依赖性 ,氧压对控制膜的结晶取向具有十分重要的作用。讨论了氧压对CeO2 薄膜结晶取向影响的可能机理。
A series of CeO2 films were prepared on Si (100) by pulsed laser deposition at different temperatures and oxygen pressures. X-ray diffraction analysis showed that the CeO2 films grown at a lower oxygen pressure were (111) -oriented and the films grown at a higher oxygen pressure were (100) -oriented. Studies have shown that the orientation of CeO2 film shows a unique dependence on oxygen pressure, and oxygen pressure plays a very important role in controlling the crystal orientation of the film. The possible mechanism of the effect of oxygen pressure on the crystal orientation of CeO2 film was discussed.