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本文对用气态蒸发法制备的S_nO_2薄膜进行了基本物理特性的研究。试样薄膜的厚度为5000,利用霍耳效应测定其载流子浓度为4.99×10~(20)cm~(-3),霍耳迁移率为4.26cm~2V~(-1)S~(-1),导电类型为n型,用二探针法测定其电阻率为2.9×10~(-3)Ω·cm.光学测定其透过率T(λ=0.589μm)可达85%以上。由基本特性判定出支配S_nO_2薄膜电导特性的主要因素是载流子浓度,同时说明它可以用作电视技术中的透明电极材料,也可与其它半导体材料形成异质结制作太阳能电池。
In this paper, the basic physical properties of S_nO_2 thin films prepared by vapor deposition have been studied. The thickness of the sample film is 5000 , the carrier concentration is 4.99 × 10 ~ (20) cm ~ (-3) by Hall effect, the Hall mobility is 4.26cm ~ 2V ~ (-1) S ~ (-1), the conductivity type is n-type, and the resistivity is 2.9 × 10 -3 Ω · cm -2 by the two-probe method.The optical transmittance of the film can be up to 85% the above. The main factor that determines the conductivity of S_nO_2 thin film determined by its basic characteristics is the carrier concentration. It also shows that it can be used as a transparent electrode material in television technology, and also can be used as a heterojunction solar cell with other semiconductor materials.