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设计并制造了一种应用于毫米波波段的串联接触式RF MEMS开关.为了在毫米波波段获得较高的隔离度,在RF MEMS开关的输入、输出端口使用细长型的接触端,以降低输入、输出端口的耦合电容.为了获得较高的接触可靠性并降低开关的开启电压,RF MEMS开关上电极结构使用蟹形梁结构.该RF MEMS开关利用南京电子器件研究所微纳米研发部的金表面工艺制备.所获得的RF MEMS开关,在30 GHz频率下,其插入损耗为-0.3 dB,隔离度为-20 dB.在20~40 GHz的频率范围内,其插入损耗均优于-0.5 dB,隔离度均优于-20 dB.
In order to obtain high isolation in the millimeter wave band, a series of contact-type RF MEMS switches are designed and manufactured for use in the millimeter-wave band. The input and output ports of the RF MEMS switch use elongated contact ends to reduce Input and output ports of RF MEMS switch.In order to obtain higher contact reliability and reduce the turn-on voltage of the switch, the RF MEMS switch upper electrode structure uses a crab beam structure.The RF MEMS switch uses the nano-R & D department of Nanjing Institute of Electronic Components Gold surface process. The resulting RF MEMS switch has an insertion loss of -0.3 dB and a -20 dB isolation at 30 GHz with better insertion loss over the 20-40 GHz frequency range - 0.5 dB, better than -20 dB isolation.