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介绍了用热壁反应炉在50mm SiC半绝缘衬底上制备的SiC MESFET外延材料.其沟道层厚度约为0.35μm,掺杂浓度约为1.7×1017cm-3.沟道和衬底之间的缓冲层为非有意掺杂的弱n型.欧姆接触用的帽层掺杂浓度约1019cm-3.器件制备采用了ICP刻蚀等技术.微波测试结果表明,1mm栅宽功率器件封装后在2GHz下输出功率达到了2W.
The SiC MESFET epitaxial material prepared on a 50mm SiC semi-insulating substrate with a hot wall reactor is introduced. The thickness of the channel layer is about 0.35μm and the doping concentration is about 1.7 × 1017cm-3. Between the channel and the substrate Of the buffer layer is not intentionally doped weak n-type. Ohmic contact with the cap doped doping concentration of about 1019cm-3. ICP preparation of devices using etching technology, etc. The microwave test results show that 1mm wide gate power device package in the 2GHz output power reached 2W.