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研究了热处理参数对LZO膜外延生长的影响。结果显示实验条件范围内,升高热处理温度、延长热处理时间和加快升温速度有利于提高(400)_(LZO)衍射峰的强度。相对于热处理温度、热处理时间和升温速度,LZO膜的织构类型对热处理时的氧分压十分敏感,氧分压直接影响到能否制备出具有单一织构成分的LZO膜。进一步分析显示,传统的形核生长理论可以很好地解释热处理温度、热处理时间和升温速度对LZO膜外延生长的影响。增加氧分压对LZO膜的外延生长存在双重作用,一方面提高氧分压可以降低膜中的积碳量,有利于LZO晶粒的长大,但另一方面,提高氧分压降低膜中的积碳后将导致对自发形核长大过程的抑制作用减弱,最终使得LZO膜不具有单一的立方织构。因此,更合理地控制/改变不同热处理阶段的氧分压才能在改善LZO膜生长动力学的同时又不影响其外延生长。
The effect of heat treatment parameters on the epitaxial growth of LZO films was investigated. The results show that within the experimental conditions, increasing the heat treatment temperature, extending the heat treatment time and speeding up the heating rate are conducive to increasing the intensity of the (400) _ (LZO) diffraction peak. Compared with the heat treatment temperature, heat treatment time and heating rate, the texture type of LZO film is very sensitive to the oxygen partial pressure during the heat treatment. The oxygen partial pressure directly affects whether the LZO film with a single texture component can be prepared. Further analysis shows that the traditional theory of nucleation growth can well explain the effects of heat treatment temperature, heat treatment time and heating rate on the epitaxial growth of LZO films. Increasing the oxygen partial pressure has a dual effect on the epitaxial growth of the LZO film. On the one hand, increasing the partial pressure of oxygen can reduce the amount of carbon deposition in the film, which is beneficial to the growth of the LZO crystal grains. On the other hand, Of carbon deposition will lead to the inhibition of spontaneous nucleation and growth process weakened, and ultimately make the LZO film does not have a single cubic texture. Therefore, it is more reasonable to control / change the oxygen partial pressure in different heat treatment stages to improve the LZO film growth kinetics without affecting its epitaxial growth.