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本文描述了异质结接点的新型光电导体器件结构,这种结构在普通带隙的光导体与金属接点之间接合了一个较高带隙的HgCdTe合金。异质结接点光导体器件的理论分析证明能有效地消除载流子清扫效应;根据计算结果断定,由于消除了响应度的“饱和”效应,故可以大大增加响应度。现已制成了异质结接点器件,用几种方法实验,结果验证了这种理论,在80K时,测得的响应度在30V/cm时约为45×10~4V/W,在125V/cm时超过15×10~5V/W。
This article describes a novel photoconductor device structure for a heterojunction junction that incorporates a higher band gap HgCdTe alloy between a conventional bandgap photoconductor and a metal contact. The theoretical analysis of the heterojunction photoconductor device proves that the carrier sweeping effect can be effectively eliminated. According to the calculation results, it can be concluded that the responsivity can be greatly increased because the “saturation” effect of the responsivity is eliminated. Has made the heterojunction junction device, with several methods of experiments, the results verify this theory, measured at 80K, the response was 30V / cm at about 45 × 10 ~ 4V / W, at 125V / cm more than 15 × 10 ~ 5V / W.