首次报道了利用光学显微法和同步辐射白光X射线形貌术对Cr∶KTP晶体缺陷的研究结果。光学显微法采用热磷酸作为腐蚀剂 ,用Opton大型显微镜反射法观察 ,观测到 (10 0 )面和 (0 2 1)面的位错蚀坑以及 (0 2 1)面的小角度晶界。用同步辐射白光X射线形貌术作出 (0 0 1)面、(0 10 )面和(10 0 )面形貌图 ,从图中可明显观察到生长层、扇形界及位错线。由此得出 ,Cr∶KTP晶体的主要缺陷是位错、生长扇形界、生长层等。 For the first time reported the use of optical microscopy and synchrotron radiation white light X-ray topography Cr: KTP crystal defects. Optical microscopy using hot phosphoric acid as an etchant observed by Opton large-scale microscope reflection observed (10 0) plane and (0 2 1) dislocation pit and (0 2 1) face small angle grain boundaries. The (0 0 1) plane, the (0 10) plane and the (10 0) plane were observed by synchrotron radiation X-ray topography. The growth layer, sector boundary and dislocation line were clearly observed. It follows that the main defects of Cr: KTP crystals are dislocations, growth sector boundaries, growth layers and the like.