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基于对制作在n-GaN上的肖特基二极管的变温I-V测试和C-V测试,采用表面势垒减薄模型对肖特基二极管的电流输运特性进行了研究.试验结果表明,肖特基接触的电流输运机理非常复杂,在不同的温度条件和偏压条件下有着不同的电流输运机理.在此基础上对肖特基接触I-V特性方程进行了修正,得到了很好的拟合曲线.试验表明,高温I-V法提取的势垒高度与常温C-V法提取的势垒高度接近于根据金属功函数得出的理论势垒高度值.
Based on the variable-temperature IV test and CV test of Schottky diodes fabricated on n-GaN, the surface-current-barrier model was used to study the current transport characteristics of Schottky diodes. The experimental results show that Schottky contact , The current transport mechanism is very complicated and has different current transport mechanisms under different temperature conditions and bias conditions. On this basis, the Schottky contact IV characteristic equation is modified and a good fitting curve The experimental results show that the height of the potential barrier extracted by the high temperature IV method and that obtained by the room temperature CV method are close to the theoretical barrier height values obtained from the work function of the metal.