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针对不含腐蚀抑制剂苯并三氮唑(BTA)的碱性铜粗抛液,通过对3英寸(1英寸=2.54 cm)铜片上的动态抛光速率和静态腐蚀速率的研究来模拟评估氧化剂对晶圆表面平坦化的影响。在12英寸铜镀膜片和TM1图形片上分别研究氧化剂体积分数对表面平坦化的影响。实验结果表明:动态抛光速率和静态腐蚀速率均随着氧化剂体积分数的增加先逐渐增大,达到最大值,然后下降,趋于平缓。片内非均匀性和剩余高低差均随H2O2体积分数的增加,先呈下降趋势,后缓慢上升。当氧化剂体积分数为3%时,动态去除速率(vRR)为398.988 nm/min,静态腐蚀速率vER为6.834 nm/min,vRR/vER比值最大,片内非均匀性最小为3.82%,台阶高低差最小为104.6 nm/min,此时晶圆片有较好的平坦化效果。
For alkaline copper roughers without benzotriazole (BTA), simulations were performed to evaluate the effect of the oxidant pair on the dynamic polishing rate and the static corrosion rate on a 3 inch (1 inch = 2.54 cm) copper sheet Effect of wafer surface flattening. The influence of the volume fraction of oxidant on the planarization of the surface was investigated on a 12-inch copper-coated film and a TM1 film. The experimental results show that both the dynamic polishing rate and the static corrosion rate increase gradually with the increase of the volume fraction of oxidant, reach the maximum, then decrease and tend to be gentle. Intra-slice heterogeneity and the remaining height difference with the increase of H2O2 volume fraction, the first downward trend, then slowly rise. When the volume fraction of oxidant is 3%, the dynamic removal rate (vRR) is 398.988 nm / min, the static corrosion rate vER is 6.834 nm / min, the ratio of vRR / vER is the maximum, the minimum on-chip nonuniformity is 3.82% The minimum is 104.6 nm / min, at this time the wafer has good flattening effect.