【摘 要】
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Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2,MoSe2,WS2 and WSe2.In this work we provi
【机 构】
：
Materials Science Factory,Instituto de Ciencia de Materiales de Madrid,Consejo Superior de Investiga
论文部分内容阅读
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2,MoSe2,WS2 and WSe2.In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy.We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-,bi-and tri-layer MoS2,MoSe2,WS2 and WSe2.Finally,we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.
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