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在等离子体化学气相沉积系统（PECVD）中，使用高氢稀释硅烷（SiH_4）加乙烯（C_2H_4）为反应气氛制备了纳米硅碳（nc-SiC_x：H）薄膜。随着（C_2H_4＋SiH_4）／H_2（X_g）从2％增加到5％时，由于H蚀刻效应的减弱，薄膜的晶态率从48％下降到8％，平均晶粒尺寸在3．5～10nm。当X_g≥6％时，生成薄膜为非晶硅碳（a-SiC_x：H）薄膜。nc－SiC~x：H薄膜的电学性质具有与薄膜的晶态率紧密相关的逾渗行为。本文将对nc－SiC_x：H薄膜的生长机制和晶化机制进行较详细讨论。
In the plasma chemical vapor deposition system (PECVD), a nanosilica-carbon (nc-SiC_x: H) thin film was prepared using high hydrogen diluted silane (SiH 4) plus ethylene (C 2 H 4) as the reaction atmosphere. With the increase of (C_2H_4 + SiH_4) / H_2 (X_g) from 2% to 5%, the crystallinity of the films decreased from 48% to 8% and the average grain size ranged from 3.5 to 10 nm due to the decrease of H etching effect. When X_g≥6%, the film is amorphous silicon carbon (a-SiC_x: H) film. The electrical properties of nc-SiC ~ x: H thin films are closely related to the crystalline rate of the films. In this paper, the growth mechanism and crystallization mechanism of nc-SiC_x: H thin films will be discussed in detail.