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由于利用 IMP ATT 二极管和 FET 晶体管这样一类的固态器件功率源得到的输出功率在不断提高,所以希望把几个这样的功率源组合起来以得到较高的功率并利用这些器件的某些优点,例如:尺寸小、重量轻和可靠性高。在本文中,我们介绍在研制宽频带。大功率、X 波段固态放大器方面所取得的进展。目前,这种器件有500MHz 的带宽(9.5～10.0GHz),并以30%的工作比工作在100瓦的功率电平上。以空间场组合电路的形式仅仅组合四个 IMPATT 就能获得逮种性能。这种功率合成器/放大器的重要优点是:合成的效率高(约95%),放大器组件间的隔离度高(大于30dB)。这种100瓦的 X 波段的固态放大器是为工作增益达45dB 而设计的。本文还介绍了为在 X 波段上达到10%带宽而设计的连续波100瓦的 GaAs FET 空间场功率合成器。
As the output power from solid state device power sources such as IMP ATT diodes and FET transistors continues to increase, it is desirable to combine several such power sources to achieve higher power and to take advantage of some of these devices, For example: small size, light weight and high reliability. In this article, we introduce the development of broadband. High-power, X-band solid state amplifier made progress. Currently, the device has a 500MHz bandwidth (9.5-10.0GHz) and operates at 100W at 30% duty cycle. With the combination of space field circuit in the form of only four IMPATT can get the catch performance. The key advantages of this power combiner / amplifier are: high efficiency (about 95%) and high isolation (> 30dB) between amplifier components. This 100-watt X-band solid-state amplifier is designed to operate at 45dB gain. This article also describes a continuous-wave 100-W GaAs FET space-domain power combiner designed for 10% bandwidth on the X-band.