论文部分内容阅读
,Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of ba
【机 构】
：
State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2010年9期
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