I-V-T相关论文
,Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of ba
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Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from I-V-T And C-V-T Measuremen
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier......