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在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。
Based on the definition of scattering parameters of optoelectronic devices, a direct optical frequency response measurement system for semiconductor optical amplifiers based on direct subtraction is established. The frequency response of the amplifier is obtained by deducting the frequency response of the laser and the detector system. The samples of InGaAsP bulk wave-traveling-wave semiconductor optical amplifier were measured and the frequency response curves of the amplifier under different injected optical powers and different bias currents were obtained. These curves reflect the gain saturation and noise characteristics of the semiconductor optical amplifier. Further analysis shows that the semiconductor optical amplifier amplifies the low-frequency modulated signal less than the high-frequency signal. The reason is that the semiconductor optical amplifier Due to the limited lifetime of the carriers, when the carriers of the low-frequency signal are consumed for a long time, the number of carriers can not be recovered in time, so that the gain is reduced.