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基于电学互连的贯穿硅通孔(TSV)和高精度圆片级键合等MEMS加工技术,提出了一种硅基射频收发微系统的三维集成结构设计方案,在硅基衬底上将MEMS滤波器、MMIC芯片和控制芯片在垂直方向上集成为单个系统级封装芯片,开发了一套可应用于制备三维集成射频收发微系统的MEMS加工工艺流程。通过基于MEMS技术的三维集成工艺,成功制备了三维集成C波段射频收发微系统芯片样品,芯片样品尺寸为14 mm×11 mm×1.4 mm,测试结果表明,制作的三维集成C波段射频收发微系统样品技术指标符合设计预期,实现了在硅基衬底上有源器件和无源器件的三维集成,验证了所开发工艺的可行性。
Based on MEMS interconnect technology such as TSV and high-precision wafer-level bonding, a three-dimensional integrated structure design of a silicon-based RF transceiver system is proposed. MEMS The filter, MMIC chip and control chip are vertically integrated into a single system-in-package (SOC) chip, and a set of MEMS processing technology that can be applied to the fabrication of 3D integrated RF transceiver micro-system is developed. The three-dimensional integrated C-band RF transceiver micro-system chip has been successfully fabricated by MEMS-based three-dimensional integration process. The sample size of the chip is 14 mm × 11 mm × 1.4 mm. The test results show that the fabricated three- The technical specifications of the samples are in accordance with the design expectation, and the three-dimensional integration of active devices and passive devices on silicon substrate is realized, which verifies the feasibility of the developed technology.