利用离子束溅射法在硅基底上制备高纯Be薄膜并实现Cu元素的可控掺杂,利用X射线能谱、扫描电镜、X射线衍射以及透射电镜等对Cu掺杂Be薄膜进行表征分析。研究结果表明:Cu元素在Be膜内分布均一,且Cu掺杂量对Be薄膜的微观结构有显著影响。Cu掺杂能抑制Be晶粒生长,Be晶粒随着薄膜中Cu含量的增多而减小,并且尺寸分布更加均匀;Cu掺杂影响Be晶粒的生长取向,使其形成更为紧凑的薄膜结构。这些因素使得掺杂Cu的Be薄膜的表面粗糙度明显降低。 High-purity Be thin films were prepared on silicon substrate by ion beam sputtering and controlled doping of Cu elements. The Be-doped Cu films were characterized by X-ray diffraction, scanning electron microscopy, X-ray diffraction and transmission electron microscopy . The results show that the Cu element is uniformly distributed in the Be film and the Cu doping amount has a significant effect on the microstructure of the Be film. Cu doping restrained the growth of Be grains, Be grains decreased with the increase of Cu content in the films, and the size distribution was more uniform. Cu doping affected the growth orientation of Be grains and formed a more compact film structure. These factors significantly reduce the surface roughness of Cu-doped Be films.