论文部分内容阅读
在已经报道过的有关Hg_(1-α)Cd_αTeMOS结构电物理特性的实验研究和理论研究的文献中,用作介质层的有简单的ZnS薄膜,也有由薄薄的自生氧化膜和ZnS薄膜组成的双层结构。有许多文献还引证了阳极氧化薄膜的参数及金属一阳极氧化薄膜一半导体(HgCdTe)电容电物理特性的研究结果。本文的目的是,获得具有阳极氧化薄膜的HgCdTe MOS结构,并研究其光电特性:势垒光电动势与偏压、温度之间的关系。实验所用的材料为n型及p型HgCdTe
In the previously reported experimental and theoretical studies on the physical properties of the Hg_ (1-α) Cd_αTeMOS structure, a simple ZnS film used as a dielectric layer is also composed of a thin spontaneous oxide film and a ZnS film Double-layer structure. There are many references that cite the results of the parameters of the anodized film and the physical properties of the HgCdTe capacitor. The purpose of this paper is to obtain an HgCdTe MOS structure with anodic oxide film and to investigate its optoelectronic properties: the relationship between the barrier photovoltaic potential and bias voltage and temperature. The experimental materials used are n-type and p-type HgCdTe