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通过介质膜 Zn S、Cd Te薄膜材料的 Ar+ 束溅射沉积研究 ,结合 Hg Cd Te器件工艺 ,成功制备了以 Zn S、Cd Te双层介质膜为绝缘层的 Hg Cd Te MIS器件 ;通过对器件的 C- V特性实验分析 ,获得了 Cd Te/ Hg Cd Te界面电学特性参数 .实验表明 :溅射沉积介质膜 Cd Te+Zn S对 Hg Cd Te的表面钝化已经可以满足 Hg Cd Te红外焦平面器件表面钝化的各项要求
By means of Ar + beam sputtering deposition of thin films of ZnS, CdTe thin films, Hg Cd Te MIS devices with ZnS, CdTe double-layer dielectric films as insulation layers were fabricated successfully by combining with Hg Cd Te device technology. The experimental results show that the surface passivation of Cd Te + Zn S on the CdTe / Hg Cd Te interface can satisfy the Hg Cd Te infrared Focal Plane surface device passivation requirements