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用射频磁控溅射法制备了CeO2-x高温氧敏薄膜。通过改变O2／Ar比，制备出不同组分和结构的CeO2-x薄膜。用Ce3d的XPS谱计算了Ce3+的浓度。XRD和AFM分析表明，薄膜经空气中高温退火后，形成了立方体CaF2型小晶粒，晶粒大小明显依赖于退火条件和膜厚。
CeO2-x high temperature oxygen sensitive films were prepared by RF magnetron sputtering. By changing the O2 / Ar ratio, CeO2-x films with different compositions and structures were prepared. The Ce3 + concentration was calculated using the XPS spectrum of Ce3d. XRD and AFM analysis showed that the film was annealed in air at high temperature to form cubic CaF2-type small grains, grain size obviously depends on annealing conditions and film thickness.