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本文采用k×p方法,从能带结构出发,研究了柔性环境应变对于InGaAsP量子阱增益的影响.计算出在不同注入载流子浓度情况下,垂直(z)方向和水平(x)方向应变对于不同组分InGaAsP量子阱TE,TM模增益谱的影响,发现z方向压应变的主要作用是使TE模的增益峰位置发生蓝移,并提高TM模的增益峰的数值;x方向压应变使TE增益峰位置发生红移、TM模增益峰位置发生蓝移,并降低TM模增益峰的数值.而z方向张应变的主要作用是使TE模的增益峰位置发生红移,并降低TM模的增益峰的数值;x方向张应变使TE增益峰位置发生蓝移、TM模增益峰位置发生红移,并提高TM模增益峰的数值.进一步得出为保持InGaAsP量子阱材料增益的波动变化量不超过30%、增益峰位置移动量不超过20 nm,柔性环境对其施加的应变应控制在3‰以内.
In this paper, the k × p method is used to study the effect of the flexible ambient strain on the gain of the InGaAsP quantum well from the energy band structure.The vertical (z) and horizontal (x) strain at different injected carrier concentration For the different composition of InGaAsP quantum well TE, TM mode gain spectrum, found that the main role of z-direction compressive strain is to TE mode gain peak position blue shift and increase TM mode gain peak value; x-direction compressive strain The TE gain peak is redshifted, the TM mode gain peak is blue-shifted and the TM mode gain peak is decreased, while the z-direction tensile strain is mainly used to redshift the gain mode peak of TE mode and reduce the TM And the value of the gain peak of TM mode is increased.The tensile strain in the x direction is blue shifted to the peak position of TE gain, the gain of TM mode is red shifted, and the value of TM mode gain peak is increased.Furthermore, in order to keep the fluctuation of the gain of InGaAsP quantum well material The amount of change does not exceed 30%, the displacement of the gain peak does not exceed 20 nm, and the strain imposed by the flexible environment should be controlled within 3 ‰.