论文部分内容阅读
为提高硅基薄膜(S iOx)发光材料的发光效率,采用双离子束溅射法制备了不同铝含量的A l-S i-S iO2薄膜。对所制备样品的电致发光(EL)测试表明:由于金属(A l)的掺入,使得在同样的电压下,薄膜中的电流随着铝含量的增加而增加;并且铝含量增大使得通过薄膜的电流增强,因而得到较高强度的电致发光。所以当硅基薄膜中掺入铝时,薄膜的发光效率得以提高;并且,随着铝含量的增加,薄膜的发光效率亦相应提高。
In order to improve the luminescent efficiency of silicon-based thin films (SiOx), Al l-Si-SiO2 thin films with different aluminum contents were prepared by dual-ion beam sputtering. The electroluminescence (EL) test of the prepared samples showed that the current in the thin film increased with the increase of Al content due to the incorporation of metal (Al), and the increase of Al content The current through the thin film is increased, resulting in higher intensity electroluminescence. Therefore, when the silicon-based film incorporation of aluminum, the film luminous efficiency is improved; and, with the increase of aluminum content, the luminous efficiency of the film is also increased accordingly.