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利用脉冲激光淀积法生长了外延Pr(?)Sr(?)MnO_3薄膜(其中x=0.1,0.2,0.3,和0.4).测量了薄膜样品在零场中与外加磁场下电阻率随温度的变化.对X≥0.2的样品在磁场下观察到负磁电阻效应.在logρ-l/T的坐标中,零磁场下的数据在很宽的温区显现很好的线性关系,具有热激活载流于输运特征.由实验数据线性拟合得到在样品成分0.1≤ X≤0.3范围的热激活能约为0.1eV.从对掺杂锰氧化物的电子结构分析出发,对这一材料的绝缘-金属相变,输运性质和负磁电阻行为进行了讨论.
The epitaxial Pr (?) Sr (?) MnO 3 thin films (where x = 0.1, 0.2, 0.3, and 0.4) were grown by pulsed laser deposition.The resistivity of the films at zero and in the applied magnetic field The negative magneto-resistive effect was observed under magnetic field for samples with X≥0.2 In the logρ-1 / T coordinates, the data under zero magnetic field showed a good linear relationship over a wide temperature range, with a thermal activation load Flowing in the transport characteristics of the experimental data obtained by linear fitting in the sample composition 0.1 ≤ X ≤ 0.3 range of thermal activation energy of about 0.1eV from the doped manganese oxide electronic structure analysis of the insulation of this material - Metal phase transitions, transport properties and negative magnetoresistance behavior are discussed.