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据日本《O Plus E》杂志1990年第129期报道,美国IBM公司已研制成不用显影液等显影材料的全干法型新一代光致抗蚀剂(感光树脂),可用于VLSI工艺.为了制作VLSI的微细电路图形,目前在显影处理时通常都使用显影液.新抗蚀剂在曝光后加热到100℃,就能完成显影处理.液体显影因抗蚀剂吸收显影液而造成精度下降.由于光刻干法化,便于微细加工,从而可进一步提高IC的集成度.
According to Japan’s “O Plus E” magazine No. 129 in 1990 reported that the United States IBM company has developed into a developer and other imaging materials, dry-type new generation of photoresist (photosensitive resin), can be used for VLSI process. At present, a developing solution is usually used for the development of the VLSI fine circuit pattern, and the development of the new resist is completed after the exposure to a temperature of 100 ° C. The liquid development is degraded by the resist absorbing the developing solution. Due to the lithography dry, easy microfabrication, which can further improve the IC’s integration.