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２７ｋｅＶＡｒ￣＋离子束沿法向分别入射在ＢａＦ＿２单晶（１１１），（１００）和（１１０）的晶面上，用捕获器方法和Ｒｕｔｈｅｒｆｏｒｄ背散射分析法测定了Ｂａ原子的溅射角分布和溅射产额。结果发现不同取向的晶体表面，它们的溅射产额有明显差异。当用剂量为５×１０￣１７ｉｏｎ／ｃｍ的Ａｒ￣＋离子分别轰击这三种晶面时，其溅射产额的顺序Ｙ＿（１００）＞ｙ＿（１１１）＞ｙ＿（１１０）．对已被上述剂量辐照过的晶面再作相同剂量轰击时，测得的溅射产额明显增大。这些结果被认为是由于在离子辐照过程中表面晶格受损逐步增大所致。
The 27keVAr ~ + ion beams are incident on the crystal planes of (111), (100) and (110) of BaF 2 in the normal direction respectively. The scattering angle distribution of Ba atoms and the distribution of Ba atoms are measured by the trap method and Rutherford backscattering analysis Sputtering yield. The results show that different orientations of the crystal surface, their sputtering yield significantly different. When bombarding the three crystal planes with Ar ~ + ions at a dose of 5 × 10 ~ 17 ion / cm respectively, the order of the sputtering yields is Y_ (100)> y_ (111)> y_ (110). Sputtering yield was significantly increased at the same dose of bombardment of the crystal face that had been irradiated with the above dose. These results are believed to be due to the gradual increase in surface lattice damage during ionizing radiation.