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设计并研制了室温连续工作的单模1.3μm垂直腔面发射激光器(VCSEL),阈值电流为0.51mA,最高连续工作温度达到82℃,斜率效率为0.29W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al(Ga)As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO2/TiO2介质薄膜上反射腔镜形成1.3μmVCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响.
A single-mode 1.3μm vertical cavity surface-emitting laser (VCSEL) with a threshold current of 0.51mA and a maximum continuous operating temperature of 82 ℃ and a slope efficiency of 0.29W / A was designed and developed.Meanwhile, InAsP / InGaAsP strain compensation Quantum well as the active gain region, the wafer direct bonding technology fusion InP-based resonant cavity and GaAs-based GaAs / Al (Ga) As distribution Bragg reflector cavity mirror and deposited by electron beam evaporation SiO2 / TiO2 dielectric film reflection The cavity mirror was used to form a 1.3μm VCSEL structure.The influence of the relative position of the resonator mode and the gain peak of the quantum well on the performance of the device was discussed and analyzed.