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应用钛/铂/金(Ti/Pt/Au)金属系统在InP基HEMT制备工艺中形成了良好的欧姆接触,通过优化合金条件,获得了较低的欧姆接触电阻,并在此基础上对钛/铂/金欧姆接触形成机理进行了深入讨论。实验结果表明:在氮气气氛下进行温度300℃/30 s快速热退火后,得到欧姆接触最小电阻值为0.025Ω·mm。同时合金界面形态良好。制备出栅长1.0μm的InP基HEMT器件,测试结果表明器件具有良好的DC和RF特性,器件最大跨导(Gmmax)为672 mS/mm。饱和源漏电流IDSS为900 mA/mm,阈值电压为-0.8 V,单一的电流增益截止频率(fT)为40 GHz,最大晶振fmax为45 GHz。
A good Ohmic contact was formed by the Ti / Pt / Au metal system in the InP-based HEMT fabrication process. By optimizing the alloy conditions, a lower Ohmic contact resistance was obtained. Based on this, / Platinum / gold Ohm contact formation mechanism was discussed in depth. The experimental results show that the minimum ohmic contact resistance is 0.025Ω · mm after rapid thermal annealing at 300 ℃ / 30 s in a nitrogen atmosphere. At the same time, the alloy interface is in good shape. The InP-based HEMT device with a gate length of 1.0μm was fabricated. The test results show that the device has good DC and RF characteristics with a maximum Gmmax of 672 mS / mm. The saturation drain current IDSS is 900 mA / mm, the threshold voltage is -0.8 V, the single current gain cutoff frequency (fT) is 40 GHz, and the maximum crystal oscillator fmax is 45 GHz.