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本文通过被局域刻蚀硅表面形貌的精确测量,考察了刻蚀速率对于激光功率、波长、反应室气压的依赖关系,讨论了在不同光斑尺寸和刻蚀深度下反应机理的变化,给出了衬底晶向和表面氧化层对刻蚀效果影响的一些新的结果。
In this paper, the dependence of the etching rate on the laser power, the wavelength and the pressure of the reaction chamber was investigated by the precise measurement of the surface morphology of the etched silicon. The changes of the reaction mechanism at different spot sizes and etching depths were discussed. Some new results of the influence of substrate orientation and surface oxide on the etching effect were obtained.