一、引言 在半导体器件的生产中,扩散源性能的优劣直接关系到能否在整个硅片上获得一致的扩散,是能否在固定的工艺条件下重复生产出合格的管芯的关键。对扩散源的研究正随着生产的发展而不断深入。同时,人们对于一个良好的扩散源的标准也日趋明确。归纳起来主要应有如下几条: 1.有良好的均匀性,即在一炉中的各片子上都可以获得几乎相同的扩散。 I. INTRODUCTION In the production of semiconductor devices, the merits of the diffusion source performance are directly related to the consistent diffusion of the entire silicon wafer. This is the key to whether a qualified die can be repeatedly produced under a fixed process condition. Research on the sources of proliferation is constantly deepening with the development of production. At the same time, people are increasingly clear about the criteria for a good source of proliferation. To sum up the main should have the following: 1. There is a good uniformity, that is, all the films in a furnace can get almost the same proliferation.