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文中提出了一种应用于CMOS电路的硅化物工艺。该工艺中硅化物的形成运用了离子束混合技术，掺杂硅化物结合RTA推结实现硅化物浅结。并且也研究了与该工艺相关的一些主要问题。特别是：（1）离子束混合及RTA对Ti硅化物的特性及Ti／SiO2间的相互作用的影响；（2）自对准TiNxOy／TiSi2形成及相态转变；（3）RTA推结时杂质再分布、分凝和结形成的机理；（4）硅化物器件特性及可靠性。结果表明，该工艺在今后的VLSI技术中可起到重要作用。
This paper presents a silicide process used in CMOS circuits. The formation of silicide in the process using ion beam mixing technology, doped silicide combined with RTA push to achieve silicide shallow junction. And also studied some of the major issues related to the process. In particular: (1) the effect of ion beam mixing and RTA on the properties of Ti silicide and the interaction between Ti / SiO2; (2) the formation and phase transition of self-aligned TiNxOy / TiSi2; (3) Impurities redistribution, condensation and junction formation mechanism; (4) silicide device characteristics and reliability. The results show that the process can play an important role in the future VLSI technology.