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在金属有机化学汽相沉积(MOCVD)方法生长的i-Al0.45Ga0.55N/n-Al0.65Ga0.35N/AlN材料结构上,成功研制了零偏暗电流为10-13量级、峰值响应为0.02～0.03 AW-1的日盲型肖特基紫外探测器。对探测器正照射和背照射时的光谱特性的研究表明:正、背照射时器件的峰值响应大小变化不大;在短波方向,正照射时的器件由于界面层的存在,在峰值响应稍有回落后平滑响应,而背照射时的器件由于n层组分调制响应迅速下滑;在长波方向,正照射时器件在截止波长后的响应较大。
In the structure of i-Al0.45Ga0.55N / n-Al0.65Ga0.35N / AlN grown by metal organic chemical vapor deposition (MOCVD) method, the zero-bias dark current of 10-13 order of magnitude has been successfully developed. The peak response A blinding Schottky UV detector with 0.02 to 0.03 AW-1. The research on the spectral characteristics of the detector when it is irradiated and back-illuminated shows that the peak response of the device does not vary much in the positive and the back irradiation. In the short-wave direction, After falling back, the response was smooth, while the device under back illumination rapidly declined due to the modulation response of n-layer component. In the long-wave direction, the device responded more after the cut-off wavelength.