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首次介绍了采用AlN介质薄膜为钝化层的InGaAs台面型探测器(λc=2.4μm)。探测器采用分子束外延(MBE)方法生长的原位掺杂的PIN In0.78Ga0.22As/In0.78Ga0.22As/InxGa1-xAs/InP外延材料。由于台面型器件的裸露面积较大,特别是台面的成形工艺所带来的侧面损伤,加大了光生载流子的表面复合,使器件的暗电流、噪声等性能急剧下降。采用新的AlN钝化工艺,制备了8元正照射台面InGaAs探测器,室温下(T=300K)电压为-0.5V时,探测器的暗电流(ID)约为9×10-8A,优值因子(R0A)大于30Ωcm2,通过与其他钝化工艺所制备的器件的性能进行分析对比得出:AlN能有效地改善器件的表面状态,减小表面复合,从而降低了暗电流,提高了探测器的性能。
For the first time, an InGaAs mesa detector with a passivation layer of AlN dielectric film (λc = 2.4 μm) is introduced. In-situ doped PIN In0.78Ga0.22As / In0.78Ga0.22As / InxGa1-xAs / InP epitaxial material grown by molecular beam epitaxy (MBE). Due to the large exposed area of the mesa device, especially the side damage caused by the mesa forming process, the surface recombination of the photogenerated carrier is enlarged, so that the performance of the device such as dark current and noise is drastically reduced. Using a new AlN passivation process, an 8-element positive-shot InGaAs detector was fabricated. The detector’s dark current (ID) was about 9 × 10 -8 A at room temperature (T = 300 K) The value factor (R0A) is larger than 30Ωcm2. The performance comparison of the devices fabricated with other passivation processes shows that AlN can effectively improve the surface condition of the devices and reduce the surface recombination, thus reducing the dark current and improving the detection Performance of the device.