在MOS晶体管和集成电路制造中,为防止铝电极断裂,提高器件的成品率,可采用如下工艺.在漏、源、栅区扩散形成后,接着在漏、源、栅区分别形成薄的氧化膜,并使漏、源区部份露出,在其上蒸发第一层电极配线(金属铝).再用化学蒸发法在第一层铝上生成一层氧化膜,并在此氧化膜上对应漏、源电极引出处的上方开窗口后腐蚀去除,再在氧化膜上蒸发第二层电 In MOS transistor and integrated circuit manufacturing, the following processes can be used to prevent breakage of aluminum electrodes and increase device yield: After the drain, source and gate regions are formed by diffusion, thin oxide layers are formed in the drain, source and gate regions, respectively Film, and the drain, the source region is partially exposed, the first layer of electrode wiring (aluminum metal) is evaporated thereon, and then an oxide film is formed on the first layer of aluminum by a chemical vapor deposition method, and on the oxide film The corresponding drain, the source electrode leads to the top of the open window after the corrosion removal, and then in the oxide film evaporation of the second layer of electricity