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在18～300K温度之内,测量了GaAs/AlA_3超晶格在不同温度下的光伏谱,采用Kronig-Penney模型的新形式计算了势阱中导带子带和价带子带的位置,对观测到的本征激子跃迁峰进行辨认,低温下的光伏谱反映了超晶格台阶式的二维状态密度分布。
The photovoltaic spectra of GaAs / AlA_3 superlattice at different temperatures were measured within the temperature range of 18 ~ 300K. The positions of the conduction band subbands and valence band subbands in the well were calculated by the new Kronig-Penney model. Of the intrinsic exciton transition peak identification, low-temperature photovoltaic spectra reflect the superlattice step-type two-dimensional state density distribution.