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本文对碲镉汞探测器中的三个有争议的问题发表了看法。首先,比较了碲镉汞费米能级的三种定量计算方法,确立了一种非抛物线能带的费米方法,这对设计该探测器提供了基本的科学数据。对Insb,单晶或外延碲镉汞等窄带简并材料都是适合的。其次,讨论了组分梯度n-p结新结构的可能性与实现的条件。最后,叙述了简并化对光伏碲镉汞器件光谱分布的影响,提出了截止波长的近似计算公式。
This article comments on three controversial issues in the HgCdTe detectors. Firstly, we compared three quantitative methods for the Fermi level of HgCdTe, and established a Fermi method for the non-parabolic energy band. This provided the basic scientific data for the design of the detector. Narrowband degenerate materials such as Insb, single crystal or epitaxial HgCdTe are suitable. Secondly, the possibility and realization conditions of the new structure of composition gradient n-p junction are discussed. Finally, the effect of degeneracy on the spectral distribution of photovoltaic HgCdTe devices is described, and an approximate formula of cut-off wavelength is proposed.